Indium Arsenide

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Gallium Arsenide

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Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer)

InAs - Indium Arsenide

 

 

 

 

Item

Qty in

Material

Orient.

Diam

Thck

Surf.

 

Stock

 

 

(mm)

(μm)

 

1687

1

undoped InAs:-

[100]

1"

3,000

P/E

E658

1

undoped InAs:-

[100]

2"

500

P/E

2658

1

undoped InAs:-

[100]

2"

500

P/E

2034

1

n-type InAs:S

[100]

2"

500

P/P

2582

2

n-type InAs:S

[100]

2"

500

P/E

2028

5

n-type InAs:Sb

[111B] �0.5�

2"

500

P/E

L712

1

p-type InAs:Zn

[100]

2"

450

P/E

InAs98

45

undoped InAs:-

[100]

2"

400

P/E

130

2

undoped InAs:-

[100]

2"

400

P/P

83

2

undoped InAs:-

[100]

2"

400

P/E

82

4

undoped InAs:-

[100]

40mm

1,000

P/P

InAs96

55

n-type InAs:S

[100]

2"

400

P/E

96

3

n-type InAs:S

[100]

2"

400

P/E

96A

3

n-type InAs:S

[100]

2"

500

P/P

138

2

p-type InAs:Zn

[100]

2"

450

P/E

Si

Gallium Antimonide

SOI

GaAs

Gallium Phosphide

GaN

Ge

InP

Ultra-Thin Silicon

ZnO

SiC - Silicon Carbide

Thermal Oxide
Indium Arsenide

Danish nanophysicists have developed a new method for manufacturing the  cornerstone of nanotechnology research - nanowires. The discovery has  great potential for the development of nanoelectronics and highly  efficient solar cells.

nanowires

Nanowires under a microscope.